TD Memory Quality and Reliability PhD Intern
Intel, US, California, Folsom +2
About the job
Job Details
Job Description
About the Team
The Technology Development (TD) Quality and Reliability organization plays a critical role in enabling the successful deployment of next-generation semiconductor technologies through silicon-based quality, reliability, and technology readiness assessments.
The Memory Quality and Reliability team works closely with Design, Device Engineering, Product Development Engineering (PDE), and Yield organizations to develop, characterize, and certify SRAM, Register File (RF), and Fuse technologies for advanced process nodes. The team supports key technology certification and PDK release milestones through memory characterization, silicon data analysis, predictive modeling, and risk assessment.
Role Overview
As a TD Memory Quality and Reliability Intern, you will collaborate with experienced engineers to evaluate advanced memory technologies and help drive technology readiness for future Intel Foundry process nodes. This role offers hands-on experience in memory characterization, silicon data analytics, statistical modeling, and semiconductor technology development.